TiN thin film resistors for monolithic microwave integrated circuits

被引：10

作者：

Malmros, Anna ^{[1
]}

Suedow, Mattias ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 05期

关键词：

electrical resistivity; monolithic integrated circuits; thin film resistors; titanium compounds; MMIC PROCESS;

D O I：

10.1116/1.3475532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (rho) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 angstrom, corresponding to a sheet resistance (R-s) of 10 Omega/square, were successfully deposited without any signs of stress in the films. The critical dissipated power (P-c) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3475532]

引用

页码：912 / 915

页数：4

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