Roll-to-Roll Production of Layer-Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor-Based Industrial Applications

被引:85
作者
Lim, Yi Rang [1 ,2 ]
Han, Jin Kyu [1 ]
Kim, Seong Ku [1 ]
Lee, Young Bum [1 ]
Yoon, Yeoheung [3 ]
Kim, Seong Jun [1 ]
Min, Bok Ki [1 ]
Kim, Yooseok [4 ]
Jeon, Cheolho [4 ]
Won, Sejeong [5 ]
Kim, Jae-Hyun [5 ]
Song, Wooseok [1 ]
Myung, Sung [1 ]
Lee, Sun Sook [1 ]
An, Ki-Seok [1 ]
Lim, Jongsun [1 ]
机构
[1] KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
[2] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
[4] Korea Basic Sci Inst, Nanosurface Res Grp, Daejeon 302333, South Korea
[5] KIMM, Dept Nanomech, Nanoconvergence Mech Syst Res Div, 156 Gajungbuk Ro, Daejeon 305343, South Korea
关键词
field effect transistors; hydrogen evolution reaction; MoS2; photodetectors; roll-to-roll production; HIGH-PERFORMANCE; GRAPHENE FILMS; WAFER-SCALE; LARGE-AREA; MOS2; NANOSHEETS; EXFOLIATION; TRANSISTORS; GRAPHITE; GROWTH;
D O I
10.1002/adma.201705270
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A facile methodology for the large-scale production of layer-controlled MoS2 layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS2 layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS2 layers by simply adjusting the concentration of (NH4)(2)MoS4. Additionally, the capability of the MoS2 for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS2-based field effect transistors exhibit unipolar n-channel transistor behavior with electron mobility of 0.6 cm(2) V-1 s(-1) and an on-off ratio of approximate to 10(3). The MoS2-based visible-light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of approximate to 22 mA W-1. Moreover, the MoS2 layers on Ni foils exhibit applicable catalytic activity with observed overpotential of approximate to 165 mV and a Tafel slope of 133 mV dec(-1). Based on these results, it is envisaged that the cost-effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor-based multifaceted applications.
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页数:8
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