Non-equiatomic FeNiCoAl-based high entropy alloys with multiscale heterogeneous lamella structure for strength and ductility

被引:61
作者
Zhang, Cheng [1 ]
Zhu, Chaoyi [1 ]
Vecchio, Kenneth [1 ,2 ]
机构
[1] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept NanoEngn, 9500 Gilman Dr,MC-0448, La Jolla, CA 92093 USA
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2019年 / 743卷
关键词
Non-equiatomic; High entropy alloy; Heterogeneous lamella structure; Geometrically necessary dislocations; Back stress; PARTIAL RECRYSTALLIZATION; MECHANICAL-PROPERTIES; SHEAR LOCALIZATION; STAINLESS-STEEL; PHASE-STABILITY; BACK STRESS; MICROSTRUCTURE; DEFORMATION; DESIGN; ENHANCEMENT;
D O I
10.1016/j.msea.2018.11.073
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new method based on conventional thermomechanical processing is proposed for design of non-equiatomic FeNiCoAlTaB (NCATB) high entropy alloy (HEA) with multiscale heterogeneous lamella (HL) structures to achieve outstanding mechanical properties. Two kinds of microstructures are produced in this study: 1) specimens annealed at 1050 degrees C exhibit structure composed of fine grains and ultrafine grains, which exhibits a combination of high strength (UTS similar to 1050 MPa) and good ductility (elongation similar to 23%); and 2) specimens annealed at 1200 degrees C which exhibit structure composed of fine grains and coarse grains, which demonstrates excellent synergy of good strength (UTS similar to 890 MPa) and exceptional ductility (elongation similar to 43%). It has been shown that shear bands formed in the cold rolling step are responsible for the fine-grain area in both specimens. Additionally, precipitation of NiAl (B2) particles also affects the formation of HL structures due to Zener pinning effect. The back-stress strengthening mechanism, responsible for high strength and ductility, is verified through combined "loading-unloading-reloading" (LUR) cyclic tensile tests and electron backscatter diffraction (EBSD) based geometrically necessary dislocation (GND) density analysis.
引用
收藏
页码:361 / 371
页数:11
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