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Transition metal doped arsenene: A first-principles study
被引:104
|作者:
Sun, Minglei
[1
]
Wang, Sake
[2
]
Du, Yanhui
[1
]
Yu, Jin
[3
]
Tang, Wencheng
[1
]
机构:
[1] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China
[2] Southeast Univ, Dept Phys, Nanjing 210096, Jiangsu, Peoples R China
[3] Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Jiangsu, Peoples R China
关键词:
SINGLE-LAYER MOS2;
TOTAL-ENERGY CALCULATIONS;
ATOMIC-STRUCTURE;
GRAPHENE;
PHOSPHORENE;
MAGNETISM;
DYNAMICS;
NANOSHEETS;
D O I:
10.1016/j.apsusc.2016.07.091
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Using first-principles calculations, we investigate the structural, electronic, and magnetic properties of 3d transition metal (TM) atoms substitutional doping of an arsenene monolayer. Based on the binding energy, the TM-substituted arsenene systems were found to be robust. Magnetic states were obtained for Ti, V, Cr, Mn and Fe doping. More importantly, a half-metallic state resulted from Ti and Mn doping, while the spin-polarized semiconducting state occurred with V, Cr and Fe doping. Our studies demonstrated the potential applications of TM-substituted arsenene for spintronics and magnetic storage devices. (C) 2016 Elsevier B.V. All rights reserved.
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页码:594 / 600
页数:7
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