A compact model for early electromigration failures of copper dual-damascene interconnects

被引：23

作者：

de Orio, R. L. ^{[1
]}

Ceric, H. ^{[1
]}

Selberherr, S. ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期

基金：

奥地利科学基金会;

关键词：

STRESS EVOLUTION; NUCLEATION; LINES;

D O I：

10.1016/j.microrel.2011.07.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1573 / 1577

页数：5