Water-induced Combustion-processed Metal-oxide Synaptic Transistor

被引：0

作者：

Liu, Qihan ^{[1
,2
]}

Zhao, C. ^{[1
,2
]}

Liu, Y.

Mitrovic, I. Z. ^{[2
]}

Xu, W. Y. ^{[3
]}

Yang, L. ^{[4
]}

Wang, Z. ^{[1
]}

Wei, W. ^{[1
]}

Wu, Y. ^{[1
]}

Yu, X. ^{[1
]}

机构：

[1] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou, Peoples R China

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool, Merseyside, England

[3] Shenzhen Univ, Coll Mat Sci & Engn, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen, Peoples R China

[4] Xian Jiaotong Liverpool Univ, Dept Chem, Suzhou, Peoples R China

来源：

2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2021年

关键词：

Synaptic transistor; Metal oxide; High-k dielectric; Solution process;

D O I：

10.1109/ICICDT51558.2021.9626483

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this study, we describe combustion-processed high-quality Li-AlOx thin films and their implementation in In2O3 synaptic transistors by a low temperatures (300 degrees C) water-based method. The resulting synaptic transistors presented a superior electrical performance at a low operating voltage of 3 V, with a positive threshold voltage of 0.5 V, a subthreshold swing of 0.21 V/decade, an On/Off ratio of 1.5x10(5) , and a mobility value of 87 cm 2 V-1 s(-1). Counterclockwise hysteresis was observed in the transfer curve and the synaptic transistor was employed to perform synaptic emulation. Long-term and short-term synaptic depression and potentiation behavior were emulated.

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页数：4

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