Room Temperature Ferromagnetism in Cu Doped ZnO Thin Films

被引:2
作者
Khan, Zaheer Ahmed [1 ]
Ghosh, Subhasis [1 ]
机构
[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷
关键词
RTFM; SQUID; Thin films; MAGNETIC SEMICONDUCTORS;
D O I
10.1063/1.3606279
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on the growth of Cu doped ZnO thin films for different Cu concentration from 0.1%, to 10% by RF magnetron sputtering. The X-ray diffraction study has shown single phase wurtzite type ZnO thin films with no evidence of copper/copper oxide or any other secondary phases. Room temperature ferromagnetism was observed in RF sputtered Cu doped ZnO films with magnetic moment per Cu atom first increasing and then decreasing with an increasing Cu content. Decrease of band gap with Cu doping, indicating strong p-d mixing of O and Cu is clear by the absorption spectroscopy study. The surface morphology by AFM of pure and Cu doped ZnO thin films show average grain size of 110nm and RMS surface roughness of 2.15nm.
引用
收藏
页码:1167 / 1168
页数:2
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