Radiation-enhanced diffusion effect in the ion beam synthesis of iron silicides

被引:0
作者
Gumarov, GG [1 ]
Khaibullin, IB
Zhikharev, VA
机构
[1] Zavoiski Phys Tech Inst, Kazan 420029, Russia
[2] Kazan State Technol Univ, Kazan 420015, Russia
来源
DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2 | 2001年 / 194-1卷
关键词
ion beam synthesis; ion implantation; radiation-enhanced diffusion;
D O I
10.4028/www.scientific.net/DDF.194-199.1463
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Radiation enhanced diffusion (RED) effect in silicide formation during ion implantation has been theoretically considered. The set of kinetic equations taking into account radiation acceleration of Fe atom diffusion was numerically solved. The sequential formation of different silicide phases and the threshold character of monosilicide nucleation within beta -FeSi2 grains were suggested. It was shown that RED strongly influences the phase composition of the implanted layer. The possibility of spatial separation of the phases on depth has been predicted. Calculated phase composition of implanted layer is in agreement with experimental data.
引用
收藏
页码:1463 / 1468
页数:6
相关论文
共 13 条
[1]  
BOLOTOV VV, 1974, FIZIKA TEHNIKA POLUP, V8, P1175
[2]   RADIATION ENHANCED DIFFUSION IN SOLIDS [J].
DIENES, GJ ;
DAMASK, AC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1713-1721
[3]   Effect of ion current density on the phase composition of ion beam synthesized iron silicides in Si(100) [J].
Gumarov, GG ;
Petukhov, VY ;
Shustov, VA ;
Khaibullin, IB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :321-323
[4]  
GUMAROV GG, IN PRESS NEORGANICHE
[5]   COALESCENCE OF BURIED COSI2 LAYERS FORMED BY MESOTAXY IN SI(111) [J].
HSIEH, YF ;
HULL, R ;
WHITE, AE ;
SHORT, KT .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7354-7361
[6]   Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mossbauer spectroscopy [J].
Kruijer, S ;
Keune, W ;
Dobler, M ;
Reuther, H .
APPLIED PHYSICS LETTERS, 1997, 70 (20) :2696-2698
[7]   PROTON-ENHANCED DIFFUSION AND VACANCY MIGRATION IN SILICON [J].
MASTERS, BJ ;
GOREY, EF .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2717-2724
[8]   ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION [J].
MINEAR, RL ;
GIBBONS, JF ;
NELSON, DG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3468-&
[9]  
Ohmura Y., 1972, Radiation Effects, V15, P167, DOI 10.1080/00337577208234690
[10]   GROWTH-KINETICS OF IRON SILICIDES FABRICATED BY SOLID-PHASE EPITAXY OR ION-BEAM SYNTHESIS [J].
RADERMACHER, K ;
MANTL, S ;
DIEKER, C ;
LUTH, H ;
FREIBURG, C .
THIN SOLID FILMS, 1992, 215 (01) :76-83