Effect of copper doping on the optical properties of AgxGaxGe1-xSe2 (0.12 ≤ x ≤ 0.25) single crystals

被引：4

作者：

Davidyuk, GE ^{[1
]}

Olekseyuk, ID ^{[1
]}

Shavarova, GP ^{[1
]}

Gorgut, GP ^{[1
]}

机构：

[1] Lesya Ukrainka State Univ, UA-43025 Lutsk, Volhynia, Ukraine

来源：

INORGANIC MATERIALS | 2005年 / 41卷 / 09期

关键词：

Copper; Solid Solution; Optical Property; Spectral Region; Structural Defect;

D O I：

10.1007/s10789-005-0238-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of AgGaSe2-GeSe2 gamma-solid solutions are investigated. The AgxGaxGe1-xSe2 (0.12 <= x <= 0.25) solid solutions are anisotropic p-type semiconductors with a 290-K band gap of about 0.26 eV. The high defect density in the crystals results in static disordering and the formation of density-of-states tails in the band gap, reducing their transmittance. Cu doping leads to bleaching in the optical window of the crystals (visible through near-IR spectral region). A model is proposed for the interaction between the dopant atoms and are structural defects in the crystals. The radiation hardness and laser damage threshold of AgxGaxGe1-xSe2 evaluated.

引用

页码：923 / 926

页数：4

共 23 条

[21] Crystallographic and magnetic properties of (Cu1-xVx)V2S4 (x ≈ 0.3) single crystals with the layered defect NiAs structure synthesized under high pressure
Klein, Y.
Moutaabbid, H.
Soyer, A.
D'Astuto, M.
Rousse, G.
Vigneron, J.
Etcheberry, A.
Gauzzi, A.
JOURNAL OF SOLID STATE CHEMISTRY, 2011, 184 (09) : 2333 - 2338
[22] Dielectric and optical properties of Pb(Mg1/3Nb2/3)0.8Ti0.2O3 (PMNT-0.2) ferroelectric relaxor single crystals
L. S. Kamzina
I. P. Raevskii
S. M. Emel’yanov
S. I. Raevskaya
E. V. Sahkar
Physics of the Solid State, 2004, 46 : 908 - 914
[23] Effect of varying Ti/V ratio on synthesis, thermal behavior, optical band gap, and electrical properties of (TixV1-x)2AlC MAX phase
Kanti, De Subhra
Roy, Chiranjit
Bhattacharyya, Somnath
JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 931

← 1 2 3 →