Effect of copper doping on the optical properties of AgxGaxGe1-xSe2 (0.12 ≤ x ≤ 0.25) single crystals

被引：4
|
作者：
Davidyuk, GE [1 ]
Olekseyuk, ID [1 ]
Shavarova, GP [1 ]
Gorgut, GP [1 ]
机构：
[1] Lesya Ukrainka State Univ, UA-43025 Lutsk, Volhynia, Ukraine
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 09期
关键词：
Copper; Solid Solution; Optical Property; Spectral Region; Structural Defect;
D O I：
10.1007/s10789-005-0238-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single crystals of AgGaSe2-GeSe2 gamma-solid solutions are investigated. The AgxGaxGe1-xSe2 (0.12 <= x <= 0.25) solid solutions are anisotropic p-type semiconductors with a 290-K band gap of about 0.26 eV. The high defect density in the crystals results in static disordering and the formation of density-of-states tails in the band gap, reducing their transmittance. Cu doping leads to bleaching in the optical window of the crystals (visible through near-IR spectral region). A model is proposed for the interaction between the dopant atoms and are structural defects in the crystals. The radiation hardness and laser damage threshold of AgxGaxGe1-xSe2 evaluated.
引用
收藏
页码：923 / 926
页数：4
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