Induced quantum-Fano effect by Raman scattering and its correlation with field emission properties of silicon nanowires

被引:8
作者
Kashyap, Vikas [1 ]
Kumar, Chandra [2 ]
Kumar, Vivek [3 ]
Chaudhary, Neeru [1 ]
Saxena, Kapil [4 ]
机构
[1] Panjab Univ, Dept Phys, Chandigarh 160014, India
[2] Univ Catolica Norte, Fac Ciencias, Dept Fis, Ave Angamos 0610,Casilla 1280, Antofagasta, Chile
[3] Indian Inst Informat Technol Design & Mfg, Dept Phys, Chennai 600127, Tamil Nadu, India
[4] Kamla Nehru Inst Technol, Dept Appl Sci, Sultanpur 228118, Uttar Pradesh, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 04期
关键词
Fano effect; Quantum confinement; Aspect ratio; Field emission; LINE-SHAPE; PHONON CONFINEMENT; ASPECT-RATIO; MECHANISM; GROWTH;
D O I
10.1007/s00339-022-05415-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we report the effect of crystal size and aspect ratio on field emission (FE) properties of silicon nanowire (Si-NWs) fabricated onto n-type Si (100) using metal-induced chemical etching (MIE) technique. The optical band gap calculation from the diffuse reflection spectra reveals the decrement in the band gap of Si-NWs from 1.98 to 1.69 eV. Here, band gap-dependent hyperbolic band model has been used to estimate the crystal size present in Si-NWs, which shows the quantum confinement (QC) effect. XPS studies indicate that the samples clearly exhibit the presence of oxidation state of Si (0) in Si-NWs. Long-range order Raman scattering has been analyzed for confirmation of quantum-Fano effect presence in Si-NWs due to red shift and asymmetry behavior of Raman band, which has been observed from Si-NWs as compared to its bulk counterpart. Moreover, a theoretical Raman line fitting model has been used to estimate the crystal size present in Si-NWs. The electron field emission properties of Si-NWs have been studied using current-voltage (I-V) measurements followed by a theoretical analysis through the Fowler-Nordheim (F-N) equation as a function of the crystal size. The electron field emission studies show the smaller crystal size has a lower turn-on voltage. Moreover, it has been found that the aspect ratio of Si-NWs linearly varies with the field enhancement factor.
引用
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页数:10
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