Design, modelling and characterization of a 3-Vppd 90-GBaud over-110-GHz-bandwidth linear driver in 0.5-μm InP DHBTs for optical communications

被引：12

作者：

Hersent, R. ^{[1
,2
]}

Johansen, Tom K. ^{[3
]}

Nodjiadjim, V ^{[1
,2
]}

Jorge, F. ^{[1
,2
]}

Duval, B. ^{[1
,2
]}

Blache, F. ^{[1
,2
]}

Riet, M. ^{[1
,2
]}

Mismer, C. ^{[1
,2
]}

Konczykowska, A. ^{[1
,2
,4
]}

机构：

[1] III V Lab, III V Si Circuits Analog Digital Interfaces CADI, Thales Res & Technol, Palaiseau, France

[2] CEA Leti, Palaiseau, France

[3] Tech Univ Denmark, Dept Elect Engn, DK-2800 Lyngby, Denmark

[4] ADesign, Lhay Les Roses, France

来源：

2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2021年

基金：

欧盟地平线“2020”;

关键词：

Large-swing linear modulator driver; high-speed integrated circuits; Tb/s optical communications; Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT); 4-level pulse amplitude modulation (PAM-4);

D O I：

10.1109/BCICTS50416.2021.9682463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-mu m InP DHBT technology (380/520-GHz f(T)/f(MAX), 4.2-V BVCE0). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-mu m InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.

引用

页数：4

共 9 条

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