Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors

被引：4

作者：

Wang, S. Y. ^{[1
]}

Ling, H. S. ^{[1
]}

Lee, C. P. ^{[2
]}

机构：

[1] Acad Sinica, Inst Astron & Astrophys, Taipei 10617, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

INFRARED PHYSICS & TECHNOLOGY | 2011年 / 54卷 / 03期

关键词：

Quantum dot; Intersubband; Infrared detector; DARK CURRENT; RESPONSIVITY; DETECTIVITY;

D O I：

10.1016/j.infrared.2010.12.018

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The behavior of quantum efficiency in QDIPs was studied in details with simple InAs/GaAs QDs and DWELL QDs structures. Despite of the large difference of the excited state energy between the two samples, the QE shows similar trends with temperature and bias voltage. The voltage to reach the QE plateau decreases with temperature and the maximum QE decreases with temperature. Considering the repulsive potential from the charge inside the QDs, the effective barrier height and thickness for the photoexcited carrier is much reduced and the QE variation with voltage follows the calculated tunneling probability. Furthermore, the multi-phonon interaction which leads to the relaxation of the excited carrier is shown to be important to the decrease of QE with temperature. The enhanced relaxation rate decreases the maximum QE value at higher temperature. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：224 / 227

页数：4

共 15 条

[1] Effect of well width on three-color quantum dots-in-a-well infrared detectors [J].

Ariyawansa, G ;

Perera, AGU ;

Raghavan, GS ;

von Winckel, G ;

Stintz, A ;

Krishna, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :1064-1066

[2] Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature [J].

Bhattacharya, P ;

Su, XH ;

Chakrabarti, S ;

Ariyawansa, G ;

Perera, AGU .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[3] High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity [J].

Chakrabarti, S ;

Stiff-Roberts, AD ;

Bhattacharya, P ;

Gunapala, S ;

Bandara, S ;

Rafol, SB ;

Kennerly, SW .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) :1361-1363

[4] Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region [J].

Chen, ZH ;

Baklenov, O ;

Kim, ET ;

Mukhametzhanov, I ;

Tie, J ;

Madhukar, A ;

Ye, Z ;

Campbell, JC .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) :4558-4563

[5] Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures [J].

Gebhard, T. ;

Alvarenga, D. ;

Souza, P. L. ;

Guimaraes, P. S. S. ;

Unterrainer, K. ;

Pires, M. P. ;

Vieira, G. S. ;

Villas-Boas, J. M. .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

[6] 640 x 512 pixels long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) imaging focal plane array [J].

Gunapala, Sarath D. ;

Bandara, Sumith V. ;

Hill, Cory J. ;

Ting, David Z. ;

Liu, John K. ;

Rafol, Sir B. ;

Blazejewski, Edward R. ;

Mumolo, Jason M. ;

Keo, Sam A. ;

Krishna, Sanjay ;

Chang, Y. -C. ;

Shott, Craig A. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (3-4) :230-237

[7] ELECTRON RELAXATION IN A QUANTUM DOT - SIGNIFICANCE OF MULTIPHONON PROCESSES [J].

INOSHITA, T ;

SAKAKI, H .

PHYSICAL REVIEW B, 1992, 46 (11) :7260-7263

[8] High detectivity InAs quantum dot infrared photodetectors [J].

Kim, ET ;

Madhukar, A ;

Ye, ZM ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3277-3279

[9] Quantum dots-in-a-well infrared photodetectors [J].

Krishna, S .

INFRARED PHYSICS & TECHNOLOGY, 2005, 47 (1-2) :153-163

[10] Quantum dot infrared photodetectors: Comparison of experiment and theory [J].

Lim, H ;

Zhang, W ;

Tsao, S ;

Sills, T ;

Szafraniec, J ;

Mi, K ;

Movaghar, B ;

Razeghi, M .

PHYSICAL REVIEW B, 2005, 72 (08)

← 1 2 →