Monolayer Graphene Field Effect Transistor-Based Operational Amplifier

被引：9

作者：

Safari, Ali ^{[1
]}

Dousti, Massoud ^{[2
]}

Tavakoli, Mohammad Bagher ^{[1
]}

机构：

[1] Islamic Azad Univ, Dept Elect Engn, Arak Branch, Arak, Iran

[2] Islamic Azad Univ, Dept Elect & Comp Engn, Sci & Res Branch, Tehran, Iran

来源：

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS | 2019年 / 28卷 / 03期

关键词：

Monolayer graphene field effect Transistor (mGFET); Op-Amp; Verilog-A; ADS; Silvaco; COMPACT MODEL;

D O I：

10.1142/S021812661950052X

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are timed in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18 mu m CMOS technology.

引用

页数：14

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