Perfectly conformal TiN and Al2O3 films deposited by atomic layer deposition

被引：0
|
作者：
Ritala, M
Leskelä, M
Dekker, JP
Mutsaers, C
Soininen, PJ
Skarp, J
机构：
[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[2] Philips Res Labs, Philips Ctr Mfg & Technol, NL-5600 MD Eindhoven, Netherlands
[3] Microchem Ltd, FIN-02631 Espoo, Finland
来源：
CHEMICAL VAPOR DEPOSITION | 1999年 / 5卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3862(199901)5:1<7::AID-CVDE7>3.0.CO;2-J
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
[No abstract available]
引用
收藏
页码：7 / 9
页数：3
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