Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis

被引：74
|
作者：
Nunes, P [1 ]
Malik, A
Fernandes, B
Fortunato, E
Vilarinho, P
Martins, R
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, P-2825 Monte De Caparica, Portugal
[2] Univ Aveiro, Ceram & Glass Dept, P-3810 Aveiro, Portugal
来源：
VACUUM | 1999年 / 52卷 / 1-2期
关键词：
D O I：
10.1016/S0042-207X(98)00321-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Undoped and doped (indium and aluminium) zinc oxide (ZnO) thin films have been prepared by spray pyrolysis, and the effect of the doping and annealing atmosphere on the electrical, optical and structural properties of the produced films has been investigated. The deposited films have a high resistivity. Annealing the films in an argon atmosphere or under vacuum leads to a substantial reduction of the electrical resistivity of the films and to an increase on the degree of cristallinity of the deposited material. The most pronounced changes were observed in the films annealed in Argon. The results also indicate that doping highly influences the electrical and structural properties of the films: which is more pronounced in the films doped with Indium. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：45 / 49
页数：5
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