Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications

被引:8
作者
El-Desouki, Munir M. [1 ]
Qasim, Syed Manzoor [1 ]
BenSaleh, Mohammed S. [1 ]
Deen, M. Jamal [2 ]
机构
[1] King Abdulaziz City Sci & Technol KACST, Riyadh 11442, Saudi Arabia
[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
来源
SENSORS | 2015年 / 15卷 / 05期
基金
加拿大自然科学与工程研究理事会;
关键词
CMOS; narrowband receiver; radio frequency (RF); short-range; wireless sensor network (WSN); IF RECEIVER; CMOS; DESIGN; TRANSCEIVER; NETWORK; INPUT; NOISE; AMPLIFIER; CIRCUITS;
D O I
10.3390/s150510791
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The demand for radio frequency (RF) transceivers operating at 2.4 GHz band has attracted considerable research interest due to the advancement in short range wireless technologies. The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion mixer. There are very few designs that focus on connecting the single-ended output LNA to a double-balanced mixer without the use of on-chip transformer, also known as a balun. The objective of designing such a receiver front-end is to achieve high integration and low power consumption. To meet these requirements, we present the design of fully-integrated 2.4 GHz receiver front-end, consisting of a narrow-band LNA and a double balanced mixer without using a balun. Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. The proposed receiver circuit fabricated using TSMC 0.18 mu m CMOS technology operates at 2.4 GHz and produces an output signal at 300 MHz. The fabricated receiver achieves a gain of 16.3 dB and consumes only 6.74 mW operating at 1.5 V, while utilizing 2.08 mm(2) of chip area. Measurement results demonstrate the effectiveness and suitability of the proposed receiver for short-range wireless applications, such as in wireless sensor network (WSN).
引用
收藏
页码:10791 / 10805
页数:15
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