Non-doped HfO2 crystallization controlled by dwell time in laser annealing

被引：7
作者：
Tabata, Toshiyuki [1 ]
Halty, Sebastien [1 ]
Roze, Fabien [1 ]
Huet, Karim [1 ]
Mazzamuto, Fulvio [1 ]
机构：
[1] Laser Syst & Solut Europe LASSE, 145 Rue Caboeufs, F-92230 Gennevilliers, France
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 11期
关键词：
laser anneal; hafnium oxide; high-k; ferroelectric; OPTICAL-PROPERTIES; THIN-FILMS;
D O I：
10.35848/1882-0786/ac2c18
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Laser annealing is performed to crystallize a 10 nm thick non-doped hafnium dioxide (HfO2) thin film. The influence of the laser annealing dwell time on the crystallization process is investigated considering the Gibbs free energy diagram of various HfO2 phases (i.e. monoclinic, cubic, tetragonal, and orthorhombic). Progressive phase transformations as a function of the dwell time are evidenced and discussed. Furthermore, for the sample showing ferroelectricity, the endurance property is much improved compared to the previously reported ferroelectric non-doped HfO2.
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页数：6
相关论文
共 53 条
  • [1] Optical properties of hafnium oxide thin films and their application in energy-efficient windows
    Al-Kuhaili, MF
    [J]. OPTICAL MATERIALS, 2004, 27 (03) : 383 - 387
  • [2] Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering
    Aouadi, SM
    Debessai, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (05): : 1975 - 1979
  • [3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
    ASPNES, DE
    STUDNA, AA
    [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
  • [4] Böscke TS, 2011, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
  • [5] High temperature thermal properties of thin tantalum nitride films
    Bozorg-Grayeli, Elah
    Li, Zijian
    Asheghi, Mehdi
    Delgado, Gil
    Pokrovsky, Alexander
    Panzer, Matthew
    Wack, Daniel
    Goodson, Kenneth E.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (26)
  • [6] Permittivity enhancement of hafnium dioxide high-κ films by cerium doping
    Chalker, P. R.
    Werner, M.
    Romani, S.
    Potter, R. J.
    Black, K.
    Aspinall, H. C.
    Jones, A. C.
    Zhao, C. Z.
    Taylor, S.
    Heys, P. N.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (18)
  • [7] Chevalier J, 1999, J AM CERAM SOC, V82, P2150
  • [8] SOME PROPERTIES OF HAFNIUM OXIDE, HAFNIUM SILICATE, CALCIUM HAFNATE, AND HAFNIUM CARBIDE
    CURTIS, CE
    DONEY, LM
    JOHNSON, JR
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1954, 37 (10) : 458 - 465
  • [9] Danilyuk A.L., 2011, PHYS CHEM APPL NANOS, P39, DOI [10.1142/9789814343909-0006, DOI 10.1142/9789814343909-0006]
  • [10] Two-phase simulation of the crystalline silicon melting line at pressures from-1 to 3 GPa
    Dozhdikov, V. S.
    Basharin, A. Yu.
    Levashov, P. R.
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2012, 137 (05)
123456