Giant intrinsic carrier mobilities in graphene and its bilayer

被引：2882
|
作者：
Morozov, S. V. [1 ,2 ]
Novoselov, K. S. [1 ]
Katsnelson, M. I. [3 ]
Schedin, F. [1 ]
Elias, D. C. [1 ]
Jaszczak, J. A. [4 ]
Geim, A. K. [1 ]
机构：
[1] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
[3] Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands
[4] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.100.016602
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm(2)/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above similar to 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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页数：4
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