Giant intrinsic carrier mobilities in graphene and its bilayer

被引：2882

作者：

Morozov, S. V. ^{[1
,2
]}

Novoselov, K. S. ^{[1
]}

Katsnelson, M. I. ^{[3
]}

Schedin, F. ^{[1
]}

Elias, D. C. ^{[1
]}

Jaszczak, J. A. ^{[4
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands

[4] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.100.016602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm(2)/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above similar to 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

引用

页数：4

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