Giant intrinsic carrier mobilities in graphene and its bilayer

被引：2928

作者：

Morozov, S. V. ^{[1
,2
]}

Novoselov, K. S. ^{[1
]}

Katsnelson, M. I. ^{[3
]}

Schedin, F. ^{[1
]}

Elias, D. C. ^{[1
]}

Jaszczak, J. A. ^{[4
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands

[4] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.100.016602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm(2)/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above similar to 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

引用

页数：4

共 37 条

[1]

ADAM S, ARXIV07080404

[2] Screening effect and impurity scattering in monolayer graphene [J].

Ando, Tsuneya .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)

[3] Making graphene visible [J].

Blake, P. ;

Hill, E. W. ;

Castro Neto, A. H. ;

Novoselov, K. S. ;

Jiang, D. ;

Yang, R. ;

Booth, T. J. ;

Geim, A. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[4] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[5] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[6]

CHEN JH, ARXIV07113646

[7]

CHEN JH, ARXIV07082408

[8]

DASSARMA S, COMMUNICATION

[9] Extraordinary mobility in semiconducting carbon nanotubes [J].

Durkop, T ;

Getty, SA ;

Cobas, E ;

Fuhrer, MS .

NANO LETTERS, 2004, 4 (01) :35-39

[10] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

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