Effect of MoO3 constituents on the growth of MoS2 nanosheets by chemical vapor deposition

被引：19
|
作者：
Wang, Xuan [1 ]
Zhang, Yong Ping [1 ]
Chen, Zhi Qian [1 ]
机构：
[1] Southwest Univ, Fac Mat & Energy, Chongqing 400715, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2016年 / 3卷 / 06期
基金：
中国国家自然科学基金;
关键词：
transition-metal dichalcogenides; MoS2; chemical vapor deposition; nanosheets; FEW-LAYER MOS2; LARGE-AREA; ATOMIC LAYERS; PHOTOLUMINESCENCE; EXFOLIATION; FABRICATION; MONOLAYER;
D O I：
10.1088/2053-1591/3/6/065014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The highly crystalline and uniform MoS2 film was grown on Si substrate by a low-pressure chemical vapor deposition method using S and MoO3 as precursors at an elevated temperature. The structures and properties of MoS2 nanosheets vary greatly with the content of MoO3 constituents in the films. The nanostructured MoS2 film exhibits strong photoluminescence in the visible range. This work may provide a pathway to synthesizing MoS2 nanosheets and facilitate the development of applicable devices.
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页数：7
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