Collision broadening in II-VI semiconductor microcavities -: art. no. 165340

被引:10
作者
Huynh, A
Tignon, J
Keller, G
Roussignol, P
Delalande, C
André, R
Romestain, R
Dang, LS
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
[2] Univ Grenoble 1, Spectrometrie Phys Lab, F-38042 Grenoble, France
关键词
D O I
10.1103/PhysRevB.68.165340
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a comprehensive study of the collision broadening in II-VI semiconductor microcavities. The polariton nonlinear coherent dynamics was investigated using angle-resolved four-wave mixing, which allows us to study the polariton dephasing on a large scale within reciprocal space. The low-energy polariton dephasing time is found to present a threshold dependence with excitation angle as well as excitation density, associated with the possibility, for polaritons with large enough in-plane wave vectors to scatter towards the high density of states excitonic reservoir. The validity of the polariton-polariton scattering calculation based on the effective exciton-exciton interaction hamiltonian is also discussed.
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页数:8
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