Current-driven reversal in annular vertical giant magnetoresistive devices

被引:21
作者
Bussmann, K
Prinz, GA
Bass, R
Zhu, JG
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
关键词
D O I
10.1063/1.1353819
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experiments are reported that demonstrate the asymmetric switching behavior reported earlier in vertical giant magnetoresistance devices arises from the solid disk geometry of the device that produces a magnetic singularity at the disk center. Annular devices having a 0.1 mum center hole and 0.5 mum outer diameter are shown to switch symmetrically with an Amperian field. (C) 2001 American Institute of Physics.
引用
收藏
页码:2029 / 2030
页数:2
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