共 4 条
Current-driven reversal in annular vertical giant magnetoresistive devices
被引:21
作者:
Bussmann, K
Prinz, GA
Bass, R
Zhu, JG
机构:
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
关键词:
D O I:
10.1063/1.1353819
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Experiments are reported that demonstrate the asymmetric switching behavior reported earlier in vertical giant magnetoresistance devices arises from the solid disk geometry of the device that produces a magnetic singularity at the disk center. Annular devices having a 0.1 mum center hole and 0.5 mum outer diameter are shown to switch symmetrically with an Amperian field. (C) 2001 American Institute of Physics.
引用
收藏
页码:2029 / 2030
页数:2
相关论文