A resonant MOSFET gate driver with complete energy recovery

被引：0

作者：

Chen, YH ^{[1
]}

Lee, FC ^{[1
]}

Amoroso, L ^{[1
]}

Wu, HP ^{[1
]}

机构：

[1] Virginia Tech, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst CPES, Blacksburg, VA 24061 USA

来源：

IPEMC 2000: THIRD INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, PROCEEDINGS | 2000年

关键词：

power MOSFET; gate drive; resonant techniques;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al high frequency power conversion applications, the power loss in driving power MOSFETs is significant. To reduce this loss, some resonant MOSFET gate drive schemes have been published. in this paper. a new resonant gale driver is proposed In contrast with other gale drive schemes, the proposed driver features complete energy recovery during both charging and discharging transitions, as well as minimized conduction loss. Simulation and experiment results show that the proposed driver can reduce MOSFET gate drive loss very effectively.

引用

页码：402 / 406

页数：5