Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond

被引:75
|
作者
Wellmann, Peter J. [1 ]
机构
[1] Friedrich Alexander Univ Erlangen Nurnberg, Mat Dept I Meet 6, Crystal Growth Lab, Martensstr 7, D-91058 Erlangen, Germany
来源
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 2017年 / 643卷 / 21期
基金
欧盟地平线“2020”;
关键词
Silicon carbide; Gallium nitride; Gallium oxide; Diamond; Energy applications; BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE CRYSTALS; INTERFACE STATE DENSITY; IN-SITU VISUALIZATION; MODIFIED LELY METHOD; SUBLIMATION GROWTH; PVT-GROWTH; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH;
D O I
10.1002/zaac.201700270
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.
引用
收藏
页码:1312 / 1322
页数:11
相关论文
共 50 条
  • [21] Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3 SiC Interfaces
    Cheng, Zhe
    Mu, Fengwen
    You, Tiangui
    Xu, Wenhui
    Shi, Jingjing
    Liao, Michael E.
    Wang, Yekan
    Huynh, Kenny
    Suga, Tadatomo
    Goorsky, Mark S.
    Ou, Xin
    Graham, Samuel
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (40) : 44943 - 44951
  • [22] Materials issues and devices of α- and β-Ga2O3
    Ahmadi, Elaheh
    Oshima, Yuichi
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (16)
  • [23] A Review of β-Ga2O3 Power Diodes
    He, Yongjie
    Zhao, Feiyang
    Huang, Bin
    Zhang, Tianyi
    Zhu, Hao
    MATERIALS, 2024, 17 (08)
  • [24] Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon
    Kitamoto, Akira
    Yamaguchi, Yohei
    Tsuno, Shintaro
    Ishibashi, Keiju
    Gunji, Yoshikazu
    Imanishi, Masayuki
    Imade, Mamoru
    Yoshimura, Masashi
    Hata, Masahiko
    Isemura, Masashi
    Mori, Yusuke
    JOURNAL OF CRYSTAL GROWTH, 2020, 535
  • [25] A review of Ga2O3 deep-ultraviolet metal-semiconductor Schottky photodiodes
    Liu, Zeng
    Tang, Weihua
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (09)
  • [26] Lifetime laser damage performance of β-Ga2O3 for high power applications
    Yoo, Jae-Hyuck
    Rafique, Subrina
    Lange, Andrew
    Zhao, Hongping
    Elhadj, Selim
    APL MATERIALS, 2018, 6 (03):
  • [27] Polycrystalline diamond growth on β-Ga2O3 for thermal management
    Malakoutian, Mohamadali
    Song, Yiwen
    Yuan, Chao
    Ren, Chenhao
    Lundh, James Spencer
    Lavelle, Robert M.
    Brown, Joseph E.
    Snyder, David W.
    Graham, Samuel
    Choi, Sukwon
    Chowdhury, Srabanti
    APPLIED PHYSICS EXPRESS, 2021, 14 (05)
  • [28] Band alignment and polarization engineering in κ-Ga2O3/GaN ferroelectric heterojunction
    Chen, Yanting
    Ning, Hongkai
    Kuang, Yue
    Yu, Xing-Xing
    Gong, He-He
    Chen, Xuanhu
    Ren, Fang-Fang
    Gu, Shulin
    Zhang, Rong
    Zheng, Youdou
    Wang, Xinran
    Ye, Jiandong
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2022, 65 (07)
  • [29] Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
    Hwang, Jih-Shang
    Liu, Tai-Yan
    Chattopadhyay, Surjit
    Hsu, Geng-Ming
    Basilio, Antonio M.
    Chen, Han-Wei
    Hsu, Yu-Kuei
    Tu, Wen-Hsun
    Lin, Yan-Gu
    Chen, Kuei-Hsien
    Li, Chien-Cheng
    Wang, Sheng-Bo
    Chen, Hsin-Yi
    Chen, Li-Chyong
    NANOTECHNOLOGY, 2013, 24 (05)
  • [30] Influence of Polymorphism on the Electronic Structure of Ga2O3
    Swallow, Jack E. N.
    Vorwerk, Christian
    Mazzolini, Piero
    Vogt, Patrick
    Bierwagen, Oliver
    Karg, Alexander
    Eickhoff, Martin
    Schoermann, Joerg
    Wagner, Markus R.
    Roberts, Joseph W.
    Chalker, Paul R.
    Smiles, Matthew J.
    Murgatroyd, Philip
    Razek, Sara A.
    Lebens-Higgins, Zachary W.
    Piper, Louis F. J.
    Jones, Leanne A. H.
    Thakur, Pardeep K.
    Lee, Tien-Lin
    Varley, Joel B.
    Furthmueller, Juergen
    Draxl, Claudia
    Veal, Tim D.
    Regoutz, Anna
    CHEMISTRY OF MATERIALS, 2020, 32 (19) : 8460 - 8470