Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond

被引:77
作者
Wellmann, Peter J. [1 ]
机构
[1] Friedrich Alexander Univ Erlangen Nurnberg, Mat Dept I Meet 6, Crystal Growth Lab, Martensstr 7, D-91058 Erlangen, Germany
来源
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 2017年 / 643卷 / 21期
基金
欧盟地平线“2020”;
关键词
Silicon carbide; Gallium nitride; Gallium oxide; Diamond; Energy applications; BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE CRYSTALS; INTERFACE STATE DENSITY; IN-SITU VISUALIZATION; MODIFIED LELY METHOD; SUBLIMATION GROWTH; PVT-GROWTH; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH;
D O I
10.1002/zaac.201700270
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.
引用
收藏
页码:1312 / 1322
页数:11
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