On the physical properties of In2O3 films prepared by atomic layer deposition using tri-methyl-indium and nitrous oxide

被引：0

作者：

Chi, Wei-Hsu ^{[1
]}

Yen, Kuo-Yi ^{[1
]}

Li, Shao-Cian ^{[1
]}

Gong, Jyh-Rong ^{[1
]}

Nieh, Cuo-Yo ^{[2
]}

Liang, Shih-Chang ^{[2
]}

机构：

[1] Natl Chung Hsing Univ, Dept Phys, Taichung, Taiwan

[2] Chung Shan Inst Sci & Technol, Mat & Elect Opt Res Div, Taipei, Taiwan

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium oxide (In2O3) films were directly grown on (0001)-plane sapphire substrates by atomic layer deposition (ALD) using tri-methyl-indium (TMIn) and nitrous oxide (N2O). The structural, optical and transport properties of the In2O3 films were characterized by theta-to-2 theta x-ray diffractometry (XRD), field emission scanning electron microscopy (FESENI), Hall measurements, and transmission spectroscopy. Based on the XRD results, In2O3 films were found to show < 111 > preferred orientation. As-grown In2O3 films are n-type in nature with typical room temperature (RT) electron concentrations and mobilities being in low 10(18) cm(-3) and 10 similar to 20 cm(2)/V-sec, and the optical transmittances and resistivities of the In2O3 films are typically similar to 80% and low 10(-1) Omega-cm, respectively.

引用

页码：791 / +

页数：2

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