Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching

被引：13

作者：

Chiu, C. H.

Lo, M. H.

Lai, C. F.

Lu, T. C. ^{[1
]}

Huang, H. W.

Chang, Y. A.

Hsueh, T. H.

Yu, C. C.

Kuo, H. C.

Wang, S. C.

Lin, C. F.

Kuo, Y. K.

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] TrueLight Corp, Hsinchu 300, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 33期

关键词：

D O I：

10.1088/0957-4484/18/33/335706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, we have fabricated In0.3Ga0.7N/GaN green emission nanorods and demonstrated optical enhancement by photoluminescence (PL) measurements. An enhancement factor of 3.5 and an emission peak blue-shift of 6.6 nm were observed at 300 K for the green emission nanorods structure in comparison to the as-grown flat surface structure. The blue-shift phenomenon from the nanorod structure could be caused by a partial reduction of the internal piezoelectric field. However, the similar carrier decay time for the green emission nanorod structure and the as-grown flat surface structure observed in low-temperature time-resolved PL measurements indicates that the dominant optical enhancement mechanism of the green emission nanorod structure could be mainly resulting from the large emission surface areas and the multiple scattering paths between the nanorods.

引用

页数：4

共 18 条

[1] Shortest wavelength semiconductor laser diode [J].