Forward and reverse recovery spice model of a JBS silicon carbide diode

被引：0

作者：

Giesselmann, M ^{[1
]}

Edwards, R ^{[1
]}

Bayne, S ^{[1
]}

Kaplan, S ^{[1
]}

Shaffer, E ^{[1
]}

机构：

[1] Texas Tech Univ, ECE, Lubbock, TX 79409 USA

来源：

Proceedings of the 26th International Power Modulator Symposium and 2004 High Voltage Workshop, Conference Record | 2004年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The charged controlled model is presented as an effective method to simulate junction barrier schottky (JBS) silicon carbide diodes. Proven as a valuable approach for silicon devices, this model can also account for wide bandgap energy semiconductors. The model was implemented in Orcad's SPICE software package using analog behavioral modelling. The simulation combines the efficiency of a traditional static model with an improved charge controlled model representing transient characteristics of the semiconductor due to stored charge in the depletion layer. The result is an enhanced model that simulates in short period of time. Parameter extraction methods are used to help identify saturation currents, capacitance, resistance, voltages, and modelling coefficients. The simulation results in a close fit to the data taken during reverse recovery of a JBS SiC diode.

引用

页码：364 / 367

页数：4

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