Molecular Layer Deposition and Pyrolysis of Polyamide Films on Si(111) with Formation of β-SiC

被引:3
作者
Amashaev, R. R. [1 ]
Abdulagatov, I. M. [1 ]
Rabadanov, M. Kh. [1 ]
Abdulagatov, A. I. [1 ]
机构
[1] Dagestan State Univ, Makhachkala 367000, Russia
基金
俄罗斯基础研究基金会;
关键词
silicon carbide; thin films; molecular layer deposition; polyamide; pyrolysis; CHEMICAL-VAPOR-DEPOSITION; LANGMUIR-BLODGETT-FILMS; SILICON-CARBIDE; THIN-FILMS; THERMAL-DEGRADATION; GROWTH; MECHANISM; SUBSTRATE; MEMBRANE; DEFECTS;
D O I
10.1134/S0036024421070049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular layer deposition (MLD) of thin polyamide films was performed using 1,3,5-benzenetricarbonyltrichloride (trimesoyl chloride, TMC) and 1,2-ethylenediamine (EDA) as precursors at a temperature of 120 degrees C. The growth rate at this temperature was 1.85 nm/cycle. In situ quartz crystal microbalance (QCM) study was used to determine the film growth behavior. QCM signal showed linear film growth with an increasing number of MLD cycles. Pyrolysis of MLD polyamide films on Si(111) was conducted at temperatures of 1100 and 1300 degrees C and a pressure of 10(-7) Torr. Thin heteroepitaxial films of beta-SiC (3C-SiC) on the Si(111) were obtained as a result of a solid-phase reaction between Si and C at 1300 degrees C. A variety of high-resolution spectroscopic techniques were used to determine the elemental composition and crystal structure of organic and ceramic films.
引用
收藏
页码:1439 / 1448
页数:10
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