Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

被引：5

作者：

Pavlov, D. A. ^{[1
]}

Shilyaev, P. A. ^{[1
]}

Korotkov, E. V. ^{[1
]}

Krivulin, N. O. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 06期

关键词：

Sapphire; Molecular Beam Epitaxy; Sapphire Substrate; Vapor Phase Epitaxy; Pyramidal Shape;

D O I：

10.1134/S1063785010060180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is established that an array of silicon nanoislands is formed on the surface of a sapphire substrate at the initial stages of molecular beam epitaxy. Silicon islands formed at low temperatures of the substrate (below 650A degrees C) exhibit a pyramidal shape, while the islands grown at T > 650A degrees possess a dome shape. The maximum density of islands was 2 x 10(11) cm(-2), their lateral dimensions were within 20 nm, and their heights did not exceed 3 nm.

引用

页码：548 / 550

页数：3

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