Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

被引：42

作者：

Cho, Byungjin ^{[1
]}

Song, Sunghoon ^{[1
]}

Ji, Yongsung ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

关键词：

interface structure; organic semiconductors; oxidation; plasma materials processing; semiconductor storage; switching; RAY PHOTOELECTRON-SPECTROSCOPY; DEVICES; CONDUCTION; SURFACES; ELEMENTS; FILMS;

D O I：

10.1063/1.3478840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied organic resistive memory devices with interfacial oxide layers, the thickness of which depended on O-2 plasma treatment time. The different interfacial oxide thicknesses sequentially changed the ON and OFF states of the final memory devices. We found that the memory devices that had undergone additional plasma treatment showed higher ON/OFF ratios than devices without the treatment, which was due to the relatively large OFF resistance values. However, a long oxidation process widened the threshold voltage distribution and degraded the switching reproducibility. This indicates that the oxidation process should be carefully optimized to provide practical high-performance organic memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478840]

引用

页数：3

共 19 条

[1] Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles [J].