1.3μm double quantum well GalnNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth

被引:18
作者
Gollub, D [1 ]
Moses, S [1 ]
Forchel, A [1 ]
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
10.1049/el:20046042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A report is presented oil continuous-wave (CW) singlemode operation of a distributed feedback GalnAsN laser diode at 1295 run. A side-mode supression ratio of 43 dB is obtained at 60 mA drive current. Small signal modulation bandwidth measurements show a record 3 dB cutoff frequency of 13.8 GHz.
引用
收藏
页码:1181 / 1182
页数:2
相关论文
共 50 条
  • [41] Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm
    Kim, J.
    Laemmlin, M.
    Meuer, C.
    Liebich, S.
    Eisenstein, G.
    Kovsh, A. R.
    Mikhrin, S. S.
    Krestnikov, I. L.
    Bimberg, D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 864 - 867
  • [42] 1.3-μm AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation
    Otsubo, Koji
    Matsuda, Manabu
    Takada, Kan
    Okumura, Shigekazu
    Ekawa, Mitsuru
    Tanaka, Hiromasa
    Ide, Satoshi
    Mori, Kazuyuki
    Yamamoto, Tsuyoshi
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 687 - 693
  • [43] New structure of 1.3 mu m strained-layer multi-quantum well complex-coupled distributed feedback lasers
    Kito, M
    Nakamura, S
    Otsuka, N
    Ishino, M
    Matsui, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1375 - 1377
  • [44] AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd: GdVO4 laser
    Huang, S. C.
    Su, K. W.
    Li, A.
    Liu, S. C.
    Chen, Y. F.
    Hunag, K. F.
    SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES, 2008, 6871 : K8712 - K8712
  • [45] 1.3 MU-M INGAASP/INP DISTRIBUTED-FEEDBACK P-SUBSTRATE PARTIALLY INVERTED BURIED-HETEROSTRUCTURE LASER DIODE
    TAKEMOTO, A
    SAKAKIBARA, Y
    NAKAJIMA, Y
    FUJIWARA, M
    KAKIMOTO, S
    NAMIZAKI, H
    SUSAKI, W
    ELECTRONICS LETTERS, 1987, 23 (11) : 546 - 547
  • [46] Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
    Zhao, H. X.
    Yoon, S. F.
    Tong, C. Z.
    Liu, C. Y.
    Wang, R.
    Cao, Q.
    NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 5
  • [47] GAAS DOUBLE QUANTUM WELL LASER DIODE WITH SHORT-PERIOD (ALGAAS)M(GAAS)N SUPERLATTICE BARRIERS
    IMAMOTO, H
    SATO, F
    IMANAKA, K
    SHIMURA, M
    APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1388 - 1390
  • [48] Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
    HX Zhao
    SF Yoon
    CZ Tong
    CY Liu
    R Wang
    Q Cao
    Nanoscale Res Lett, 6
  • [49] Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers
    Fathpour, S
    Mi, ZT
    Bhattacharya, P
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) : 2250 - 2252
  • [50] 1.5-MU-M LAMBDA-4 SHIFTED MULTIPLE QUANTUM WELL DISTRIBUTED FEEDBACK LASER-DIODES
    SASAKI, T
    TAKANO, S
    HENMI, N
    YAMADA, H
    KITAMURA, M
    HASUMI, H
    MITO, I
    ELECTRONICS LETTERS, 1988, 24 (23) : 1408 - 1409