Numerical Modeling of a diffusion-based In0.53Ga0.47As lateral PIN photodiode for 10 gbit/s optical communication systems

A novel purely diffusion-based In0.53Ga0.44 As lateral PIN photodiode was successfully modeled. Device dimensions are 12 x 1.8 mu m(2) with electrode spacing of 1.5 mu m and width of I pm. The effective intrinsic region width is similar to 0.2 mu m. The 2D modeled device achieved responsivity of 0.765 A/W and -3dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks. The device was biased at -2V and illuminated with a 5 W/cm(2) optical spot power at a wavelength of 1.55 mu m. SNR ratio was recorded at 31.2 d13.