ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

被引：104

作者：

Chen, Zhi-Gang ^{[1
,2
]}

Cheng, Lina ^{[1
]}

Xu, Hong-Yi ^{[1
]}

Liu, Ji-Zi ^{[1
]}

Zou, Jin ^{[1
]}

Sekiguchi, Takashi ^{[4
]}

Lu, Gao Qing ^{[3
]}

Cheng, Hui-Ming ^{[2
]}

机构：

[1] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld, Australia

[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China

[3] Univ Queensland, ARC Ctr Excellence Funct Nanomat, Brisbane, Qld, Australia

[4] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki, Japan

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 21期

基金：

澳大利亚研究理事会;

关键词：

EMISSION PROPERTIES; NANOWIRE ARRAYS; GROWTH; NANOSTRUCTURES; CATHODOLUMINESCENCE; NANOBELTS; NANOARCHITECTURES; HETEROSTRUCTURES; NANOCRYSTALS; FABRICATION;

D O I：

10.1002/adma.200903643

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

引用

页码：2376 / 2380

页数：5

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