A 90-nm CMOS LNA for MB-OFDM UWB in QFN package

被引：0

作者：

Wong, King Wah ^{[1
]}

Arasu, M. Annamalai ^{[1
]}

Chan, Wei Khuen ^{[2
]}

机构：

[1] ASTAR, Inst Microelect, Singapore, Singapore

[2] Wipro Techno Ctr, Singapore, Singapore

来源：

2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年

关键词：

UWB; front end; LNA; low noise; 90nm CMOs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the design of a single ended low-noise amplifier (LNA) dedicated for multi-band orthogonal frequency-division multiplexing (MB-OFDM) Band Group-1 ultra-wideband (UWB) band is described. It achieves a flat gain from 2 to 5GHz of 17dB while drawing a current of 15.9mA from a 1.2V supply. The circuit has been implemented in 90-nm CMOs technology and features a minimum noise figure (NF) of 2.5dB over the frequency range as well as an input referred third-order intermodulation (IIP3) of -8dBm.

引用

页码：447 / +

页数：2

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