A 90-nm CMOS LNA for MB-OFDM UWB in QFN package

被引：0
作者：
Wong, King Wah [1 ]
Arasu, M. Annamalai [1 ]
Chan, Wei Khuen [2 ]
机构：
[1] ASTAR, Inst Microelect, Singapore, Singapore
[2] Wipro Techno Ctr, Singapore, Singapore
来源：
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年
关键词：
UWB; front end; LNA; low noise; 90nm CMOs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the design of a single ended low-noise amplifier (LNA) dedicated for multi-band orthogonal frequency-division multiplexing (MB-OFDM) Band Group-1 ultra-wideband (UWB) band is described. It achieves a flat gain from 2 to 5GHz of 17dB while drawing a current of 15.9mA from a 1.2V supply. The circuit has been implemented in 90-nm CMOs technology and features a minimum noise figure (NF) of 2.5dB over the frequency range as well as an input referred third-order intermodulation (IIP3) of -8dBm.
引用
收藏
页码：447 / +
页数：2
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