Kinetics of surfactant-mediated epitaxy of III-V semiconductors

被引：17

作者：

Grandjean, N

Massies, J

机构：

[1] Centre de Recherche sur lșHétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, 06560 Valbonne, Rue B. Grégory-Sophia Antipolis

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.53.R13231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surfactant-mediated epitaxy (SME) of III-V semiconductors is studied in the case of the GaAs(001) growth using Te as surfactant. To account for the strong surface segregation of Te, a phenomenological exchange mechanism is used. This process explains the reduction of the surface diffusion length evidenced by scanning tunneling microscopy (STM). However, this kinetics effect is observed only for restricted growth conditions: the As surface coverage should be sufficient to allow the exchange process. STM results as well as Monte Carlo simulations clearly show that the group-V element surface coverage plays a key role in the kinetics of SME of III-V semiconductors.

引用

页码：13231 / 13234

页数：4

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