Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes

被引：70
作者：
Chen, J. Y. [1 ]
Feng, J. F.
Coey, J. M. D.
机构：
[1] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期
基金：
爱尔兰科学基金会;
关键词：
ROOM-TEMPERATURE; DEPENDENCE; LAYERS; NOISE;
D O I：
10.1063/1.3701277
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MgO-barrier magnetic tunnel junction sensors with both CoFeB layers pinned by IrMn have been fabricated, which show a tunneling magnetoresistance (TMR) of up to 255% at room temperature. The perpendicular configuration for magnetic field sensing is set using a two-step field annealing process. The linear TMR field range and sensitivity are tuned by inserting an ultrathin Ru layer between the upper IrMn and the top-pinned CoFeB layer. The field sensitivity reaches 26%/ mT, while the noise detectivity is about 90 nT/root Hz at 10 Hz for a 0.3 nm Ru insertion layer. The bias dependence of the noise suggests that this is a useful design for sensor applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701277]
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页数：4
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