Effects of source/drain activation on channel-length for excimer-laser-crystallized poly-Si thin-film transistors

Laser activation (LA) or furnace activation (FA) were used to activate the source/drain regions of excimer-laser-crystallized (ELC) poly-Si thin-film transistors. The turn-on state performance of the ELC/LA devices is inferior to that of the ELC/FA devices as a result of the created extra resistance near the source/drain junction using the laser activation scheme. For devices with long channel length, the difference in the turn-on state performance between the ELC/FA and ELC/LA devices is slight. However, for devices with short channel length, the difference is significantly increased. This is attributed to the different weight of the created extra resistance for different channel-length.