Impact of Photon Lifetime on High-Speed VCSEL Performance

被引：166

作者：

Westbergh, Petter ^{[1
]}

Gustavsson, Johan S. ^{[1
]}

Kogel, Benjamin ^{[1
]}

Haglund, Asa ^{[1
]}

Larsson, Anders ^{[1
]}

机构：

[1] Chalmers, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 06期

关键词：

Damping; high-speed modulation; photon lifetime; vertical-cavity surface-emitting laser (VCSEL); SURFACE-EMITTING LASERS; QUANTUM-WELL LASERS; SMALL-SIGNAL MODULATION; ERROR-FREE OPERATION; CARRIER TRANSPORT; HIGH-EFFICIENCY; 40; GBIT/S; NOISE;

D O I：

10.1109/JSTQE.2011.2114642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the impact of reduced photon lifetime on the static and dynamic performance of high-speed, oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is reduced by a shallow-surface etch that lowers the reflectivity of the top mirror. From an analysis of the dependence of slope efficiency on mirror loss (etch depth) and temperature, we deduce values for the internal quantum efficiency and the internal optical loss and their dependencies on temperature. From an analysis of the dependence of the small-signal-modulation response on photon lifetime (etch depth) and temperature, we deduce values for differential gain and gain compression, and their dependencies on photon lifetime and temperature. We find a tradeoff between high resonance frequency and low damping for speed enhancement, leading to an optimum photon lifetime close to 3 ps for this particular VCSEL design that enables a modulation bandwidth of 23 GHz and error-free transmission at 40 Gb/s.

引用

页码：1603 / 1613

页数：11

共 24 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].

AFROMOWITZ, MA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1292-1294

[2]

ANAN T, 2008, OFC SAN DIEG CA

[3] Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s [J].

Blokhin, S. A. ;

Lott, J. A. ;

Mutig, A. ;

Fiol, G. ;

Ledentsov, N. N. ;

Maximov, M. V. ;

Nadtochiy, A. M. ;

Shchukin, V. A. ;

Bimberg, D. .

ELECTRONICS LETTERS, 2009, 45 (10) :501-502

[4] High-efficiency, high-speed VCSELs with 35Gbit/s error-free operation [J].

Chang, Y.-C. ;

Wang, C. S. ;

Coldren, L. A. .

ELECTRONICS LETTERS, 2007, 43 (19) :1022-1024

[5] High-efficiency, high-speed VCSELs with deep oxidation layers [J].

Chang, Y. C. ;

Wang, C. S. ;

Johansson, L. A. ;

Coldren, L. A. .

ELECTRONICS LETTERS, 2006, 42 (22) :1281-1283

[6]

Coldren L. A., 1995, DIODE LASERS PHOTONI

[7]

*FIN CORP, 2010, 10 GB OX IS VCSEL RE

[8] EFFECTIVE-INDEX MODEL FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

HADLEY, GR .

OPTICS LETTERS, 1995, 20 (13) :1483-1485

[9] Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief [J].

Haglund, Å ;

Gustavsson, JS ;

Vukusic, J ;

Modh, P ;

Larsson, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) :368-370

[10] Active Region Design for High-Speed 850-nm VCSELs [J].

Healy, Sorcha B. ;

O'Reilly, Eoin P. ;

Gustavsson, Johan S. ;

Westbergh, Petter ;

Haglund, Asa ;

Larsson, Anders ;

Joel, Andrew .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (04) :506-512

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