0.1 mu m MOSFET with super self-aligned shallow junction electrodes

被引：0

作者：

Ishii, M ^{[1
]}

Goto, K ^{[1
]}

Sakuraba, M ^{[1
]}

Matsuura, T ^{[1
]}

Murota, J ^{[1
]}

Kudoh, Y ^{[1
]}

Koyanagi, M ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,LAB ELECT INTELLIGENT SYST,AOBA KU,SENDAI,MIYAGI 98077,JAPAN

来源：

ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY | 1997年 / 1997卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Super Self-aligned Shallow junction Electrode MOSFET's((SEMOSFET)-E-3) with a 0.1 mu m gate length are fabricated by utilizing in-situ impurity doped selective epitaxy on the source/drain regions at 550 degrees C by Si1-xGex CVD. Normal saturation characteristics were observed and drastic improvements of the current drivability were performed by annealing and selective tungsten growth. Threshold voltage scarcely showed a shift with the gate length, which means that the short channel effect is greatly suppressed in (SE)-E-3-MOSFET. The results show very high potentials for an ultrasmall MOSFET, because the effective channel length is almost the same as the fabricated gate length and the source/drain junctions are extremely shallow.

引用

页码：441 / 449

页数：9

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