Confined excitons, phonons and their interactions in Ge nanocrystals embedded in SiO2

被引：0
|
作者：
Teo, KL [1 ]
Kwok, SH [1 ]
Yu, PY [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Singapore 117548, Singapore
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the resonant Raman scattering of the optical phonon in Ge nanocrystals with radius ranging from 2 to 5 nm. We have observed the effect of quantum confinement on both the optical phonon and the E-1 exciton. The confinement energy of the E-1 exciton has been explained within the effective mass approximation.
引用
收藏
页码：1213 / 1214
页数：2
相关论文
共 50 条
  • [1] Raman spectra of Ge nanocrystals embedded into SiO2
    Kolobov, AV
    Maeda, Y
    Tanaka, K
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) : 3285 - 3289
  • [2] Superheating and supercooling of Ge nanocrystals embedded in SiO2
    Xu, Q.
    Sharp, I. D.
    Yuan, C. W.
    Yi, D. O.
    Liao, C. Y.
    Glaeser, A. M.
    Minor, A. M.
    Beeman, J. W.
    Ridgway, M. C.
    Kluth, P.
    Ager, J. W., III
    Chrzan, D. C.
    Haller, E. E.
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 : 1042 - 1046
  • [3] Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix
    de Jong, E. M. L. D.
    de Boer, W. D. A. M.
    Yassievich, I. N.
    Gregorkiewicz, T.
    PHYSICAL REVIEW B, 2017, 95 (19)
  • [4] Structural studies of Ge nanocrystals embedded in SiO2 matrix
    Rao, N. Srinivasa
    Dhamodaran, S.
    Pathak, A. P.
    Kulriya, P. K.
    Mishra, Y. K.
    Singh, F.
    Kabiraj, D.
    Pivin, J. C.
    Avasthi, D. K.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 264 (02): : 249 - 253
  • [5] Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix
    Ray, SK
    Das, K
    OPTICAL MATERIALS, 2005, 27 (05) : 948 - 952
  • [6] Embedded Ge nanocrystals in SiO2 synthesized by ion implantation
    Baranwal, V.
    Gerlach, J. W.
    Lotnyk, A.
    Rauschenbach, B.
    Karl, H.
    Ojha, S.
    Avasthi, D. K.
    Kanjilal, D.
    Pandey, Avinash C.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (13)
  • [7] Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
    Serincan, U
    Kartopu, G
    Guennes, A
    Finstad, TG
    Turan, R
    Ekinci, Y
    Bayliss, SC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (02) : 247 - 251
  • [8] The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals
    Min, KS
    Shcheglov, KV
    Yang, CM
    Atwater, HA
    Brongersma, ML
    Polman, A
    APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2511 - 2513
  • [9] Surface acoustic phonon modes of Ge nanocrystals embedded in SiO2
    Giri, PK
    Kesavamoorthy, R
    Panigrahi, BK
    Nair, KGM
    SOLID STATE COMMUNICATIONS, 2005, 136 (01) : 36 - 40
  • [10] Ion beam synthesis of Ge nanocrystals embedded in SiO2 matrix
    Rao, N. Srinivasa
    Pathak, A. P.
    Kabiraj, D.
    Khan, S. A.
    Panigrahi, B. K.
    Nair, K. G. M.
    Avasthi, D. K.
    ION BEAMS AND NANO-ENGINEERING, 2010, 1181 : 99 - +
12345