Molecular Dynamics Simulation of Al2O3-SiC Interface

被引：3

作者：

Zhou, T. T. ^{[1
]}

Huang, C. Z. ^{[1
]}

Liu, H. L. ^{[1
]}

Zou, B. ^{[1
]}

Zhu, H. T. ^{[1
]}

机构：

[1] Shandong Univ, Sch Mech Engn, CAJET, Jinan 250061, Peoples R China

来源：

ADVANCES IN MATERIALS MANUFACTURING SCIENCE AND TECHNOLOGY XIV | 2012年 / 697-698卷

关键词：

Molecular dynamics; Interface model; Interfacial energy; Diffusion coefficient;

D O I：

10.4028/www.scientific.net/MSF.697-698.192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interfacial energy and diffusion phenomenon of the Al2O3(012)-SiC (011) interface model are studied based on molecular dynamics. The interfacial energy increases firstly until reaches its maximum 0.459J/m(2) at the temperature of 1500K and then decreases. The relationship of diffusion coefficients for each kind of atoms is C>Si>O>Al. Diffusion coefficients of atoms increase at first and then decrease as the temperature goes up. This indicates the diffusion mechanism has been changed during the temperature rising process.

引用

页码：192 / 197

页数：6

共 9 条

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