Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies

被引：81

作者：

Pandian, M. Senthil ^{[1
]}

Balamurugan, N. ^{[1
]}

Ganesh, V. ^{[2
]}

Shekar, P. V. Raja ^{[2
]}

Rao, K. Kishan ^{[2
]}

Ramasamy, P. ^{[1
]}

机构：

[1] SSN Coll Engn, Ctr Crystal Growth, Kalavakkam 603110, India

[2] Kakatiya Univ, Dept Phys, Warangal 506009, Andhra Pradesh, India

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 23期

关键词：

A1.specific orientation; A2.growth from solutions; A2.single crystal growth;

D O I：

10.1016/j.matlet.2008.04.078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Unidirectional < 001 > bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG-DTA and UV-Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3830 / 3832

页数：3

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