Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches

被引：47

作者：

Herfst, R. W. ^{[1
]}

Steeneken, P. G. ^{[1
]}

Schmitz, J. ^{[2
]}

Mank, A. J. G. ^{[3
]}

van Gils, M. ^{[4
]}

机构：

[1] NXP Semicond, High Tech Campus 5,Postbox WAY41, NL-5656 AA Eindhoven, Netherlands

[2] Univ Twente, MESA Res Inst, Chair Semicond Components, NL-7500 AE Enschede, Netherlands

[3] Philips Res Europe, Eindhoven, Netherlands

[4] NXP Semicond, Nijmegen, Netherlands

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

RF MEMS; capacitive switches; silicon nitride; dielectric charging; diffusion;

D O I：

10.1109/RELPHY.2008.4558935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we use Scanning Kelvin Probe Microscopy (SKPM) to detect charge in the dielectric of RF MEMS capacitive switches. We observe a laterally inhomogeneous distribution. Laterally inhomogeneous dielectric charging leads to a narrowing of the C-V curve [1], and can lead to stiction of the membrane. The measurements show that trapped charges slowly diffuse, which reduces the inhomogeneity and shows that charge is vertically confined. From these measurements we estimate the lateral diffusion coefficient of trapped charges.

引用

页码：492 / +

页数：2

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