Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si

被引:28
作者
Grimaldi, MG
Coffa, S
Spinella, C
Marabelli, F
Galli, M
Miglio, L
Meregalli, V
机构
[1] Univ Catania, Ist Nazl Fis Mat, I-95129 Catania, Italy
[2] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy
[3] CNR, Ist Nazl Metodol & Tecnol Microelettron, I-95121 Catania, Italy
[4] Univ Pavia, Ist Nazl Fis Mat, I-27100 Pavia, Italy
[5] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[6] Univ Pavia, Ist Nazl Fis Mat, I-20126 Milan, Italy
[7] Univ Pavia, Dipartimento Sci Mat, I-20126 Milan, Italy
[8] MPI FKF, D-70569 Stuttgart, Germany
关键词
beta-FeSi2; ion beam synthesis; dislocation;
D O I
10.1016/S0022-2313(98)00149-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The structural and optical properties of beta-FeSi2 precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of beta-FeSi2 precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 mu m and a weak peak at 1.46 mu m. Optical transmission measurements showed a direct band gap about 0.8 eV, smaller than in continuous beta-FeSi2 film. Calculation of the electronic bands of beta-FeSi2 for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:467 / 471
页数:5
相关论文
共 4 条
  • [1] ELECTRONIC-STRUCTURE OF BETA-FESI2
    CHRISTENSEN, NE
    [J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7148 - 7153
  • [2] PHOTOLUMINESCENCE FROM MBE SI GROWN AT LOW-TEMPERATURES - DONOR BOUND EXCITONS AND DECORATED DISLOCATIONS
    HIGGS, V
    LIGHTOWLERS, EC
    DAVIES, G
    SCHAFFLER, F
    KASPER, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 593 - 598
  • [3] A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 mu m
    Leong, D
    Harry, M
    Reeson, KJ
    Homewood, KP
    [J]. NATURE, 1997, 387 (6634) : 686 - 688
  • [4] Dislocation-related luminescence properties of silicon
    Steinman, EA
    Grimmeiss, HG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (01) : 124 - 129