Converse-piezoelectric effect on current-voltage characteristics of symmetric ferroelectric tunnel junctions

被引：8

作者：

Lu, Xiaoyan ^{[1
,2
]}

Cao, Wenwu ^{[1
]}

Jiang, Wenhua ^{[1
]}

Li, Hui ^{[2
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Harbin Inst Technol, Sch Civil Engn, Harbin 150001, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 01期

基金：

中国博士后科学基金; 美国国家科学基金会;

关键词：

FILMS; HETEROSTRUCTURES; POLARIZATION;

D O I：

10.1063/1.3673600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of symmetric ferroelectric tunnel junction were studied in an ultrathin ferroelectric barrier with the consideration of the thickness and strain dependent converse-piezoelectric effect. With proper boundary conditions, large piezoelectric strain can be achieved in the ferroelectric barrier when its thickness is in the vicinity of the critical thickness. Because of the exponential relationship between the tunneling current and the effective film thickness, tunneling current can be greatly enhanced by the external electric field and substrate induced strain. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673600]

引用

页数：5

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