MOSFET based Multi-level Converter for IPT Systems

Traditionally, Inductive Power Transfer (IPT) systems employ an IGBT based H-bridge as the primary side converter. Consequently, these systems are not suitable for high power applications, such as fast electric vehicle (EV) charges, that require high frequency operation. This paper therefore proposes a high frequency multilevel IPT system that is suitable for high power applications. The proposed multilevel system is implemented using low voltage MOSFET switching devices and a mathematical model with analysis is presented while comparing its performance to a conventional IPT system. Simulated results of a 20 kW, 7-level bi-directional IPT system clearly indicate that the proposed multilevel IPT topology offers superior performance in relation to losses, harmonics and cost.